Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent

• Published in: Journal of crystal growth Vol. 292; no. 2; pp. 290 - 293
• Main Authors: UDONO, Haruhiko, AOKI, Yuta, SUZUKI, Hirokazu, KIKUMA, Isao
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.07.2006
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from solutions; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Temperature dependence; 71.20 A1. Characterization; Inorganic compounds; Semiconductor materials; TSSG method; Hall mobility; Transition element compounds; Doping; Binary compounds; Experimental study; Nickel additions; Monocrystals; Quantity ratio; Impurities; A2. Single-crystal growth; 81.10; Crystal growth from solutions; Ionization potential; A2. Growth from solution; B1. Semiconducting silicon compound; Carrier density; Iron silicides; Exchange interactions
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.04.024

We have grown low-resistive and n-type beta-FeSi2 single crystals by the temperature gradient solution growth (TGSG) method using Ni-doped Zn solvent. These crystals were obtained at the Ni concentrations between 0.05 and 0.5wt%. Above the Ni concentration of 1.0wt%, nickel silicides were preferably grown. The resisitivity of the Ni-doped crystals was 0.2-0.5Omegacm at room temperature (RT). The electron concentration and Hall mobility at RT were (5-6)X1018cm-3 and 3-6cm2/Vs, respectively. We also determined the ionization energy of 26-60meV for the Ni impurity in beta-FeSi2.