Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In 0.38 Ga 0.62 As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spe...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 4; pp. 509 - 513
Main Authors Ponomarev, D. S., Khabibullin, R. A., Yachmenev, A. E., Maltsev, P. P., Grekhov, M. M., Ilyakov, I. E., Shishkin, B. V., Akhmedzhanov, R. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.04.2017
Springer Nature B.V
Subjects
Buffer layers
Epitaxial growth
Fluence
Frequency spectrum
Gallium arsenide
Low temperature
Magnetic Materials
Magnetism
Molecular beam epitaxy
Molecular structure
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Substrates
Terahertz frequencies
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Summary:The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In 0.38 Ga 0.62 As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10 –5 at a rather low optical fluence of ~40 μJ/cm 2 , which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617040170