Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector
Graphene (Gr)/Si-based optoelectronic devices have attracted a lot of academic attention due to the simpler fabrication processes, low costs, and higher performance of their two-dimensional (2D)/three-dimensional (3D) hybrid interfaces in Schottky junction that promotes electron-hole separation. How...
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Published in | Nano research Vol. 14; no. 6; pp. 1967 - 1972 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Beijing
Tsinghua University Press
01.06.2021
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Graphene (Gr)/Si-based optoelectronic devices have attracted a lot of academic attention due to the simpler fabrication processes, low costs, and higher performance of their two-dimensional (2D)/three-dimensional (3D) hybrid interfaces in Schottky junction that promotes electron-hole separation. However, due to the built-in potential of Gr/Si as a photodetector, the
I
ph
/
I
dark
ratio is often hindered near zero-bias at relatively low illumination intensity. This is a major drawback in self-powered photodetectors. In this study, we have demonstrated a self-powered van der Waals heterostructure photodetector in the visible range using a Gr/hexagonal boron nitride (h-BN)/Si structure and clarified that the thin h-BN insertion can engineer asymmetric carrier transport and avoid interlayer coupling at the interface. The dark current was able to be suppressed by inserting an h-BN insulator layer, while maintaining the photocurrent with minimal decrease at near zero-bias. As a result, the normalized photocurrent-to-dark ratio (NPDR) is improved more than 10
4
times. Also, both
I
ph
/
I
dark
ratio and detectivity, increase by more than 10
4
times at −0.03 V drain voltage. The proposed Gr/h-BN/Si heterostructure is able to contribute to the introduction of next-generation photodetectors and photovoltaic devices based on graphene or silicon. |
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ISSN: | 1998-0124 1998-0000 |
DOI: | 10.1007/s12274-020-2866-x |