Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF 2 /Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of...

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Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 10; no. 5; pp. 912 - 916
Main Authors Velichko, A. A., Ilyushin, V. A., Krupin, A. U., Gavrilenko, V. A., Filimonova, N. I.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2016
Springer Nature B.V
Subjects
Calcium fluoride
Chemistry and Materials Science
Disruption
Materials Science
Reflection
Specular reflection
Surfaces and Interfaces
Thin Films
molecular beam epitaxy
nanostructure
silicon
calcium fluoride
reflection high-energy electron diffraction
oscillations
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Summary:The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF 2 /Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF 2 layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451016050165