Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals

Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type Si...

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Bibliographic Details
Published inMaterials science forum Vol. 821-823; pp. 265 - 268
Main Authors Xu, Xian Gang, Hu, Xiao Bo, Cui, Ying Xin
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 30.06.2015
Subjects
Fourier transforms
Infrared
Reflectance
Reflectivity
Single crystals
Spectra
Transmittance
Wafers
Infrared Transmission
Infrared Reflectivity
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Summary:Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.
Bibliography:Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.821-823.265