Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified IT...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 11; pp. 122 - 126
Main Author 焦博 姚丽娟 吴春芳 董化 侯洵 吴朝新
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Cadmium selenides
CdSe量子点
Devices
Electrodes
Intermetallics
ITO
Materials selection
Organic materials
Quantum dots
Transporting
传输性能
修饰
室温
有机材料
电阻器件
负微分电阻
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/11/117301

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Summary:Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.
Bibliography:11-1959/O4
JIAO Bo,YAO Li-Juan, WU Chun-Fang, DONG Hua, HOU Xun,WU Zhao-Xin（ 1 Key Laboratory for Physical Electronics and Devices of the Ministry of Education ＆ Shannxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi＇an Jiaotong University, Xi＇an 710049 2School of Physical Science and Technology, Lanzhou University, Lanzhou 730000）
Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/11/117301