Nb5N6 thin film on silicon and silicon oxide： A good material for terahertz detection

• Published in: Chinese science bulletin Vol. 54; no. 18; pp. 3344 - 3346
• Main Authors: Lu, XueHui, He, Ning, Kang, Lin, Chen, Jian, Jin, BiaoBing, Wu, PeiHeng
• Format: Journal Article
• Language: English
• Published: Heidelberg SP Science in China Press 01.09.2009
• Subjects: Brief Communication/Materials Science & Engineering; Chemistry/Food Science; Earth Sciences; Engineering; Humanities and Social Sciences; Life Sciences; multidisciplinary; Physics; Science; Science (multidisciplinary); Si（100）; 二氧化硅; 太赫兹; 常用材料; 电阻温度系数; 磁控溅射; temperature coefficient of resistance (TCR); terahertz detection; thermometer; Nb; N; thin solid films
• ISSN: 1001-6538; 1861-9541
• DOI: 10.1007/s11434-009-0485-8

Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance （TCR） of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si（100）, SiO2/Si（100）, SiO2 substrates by using radio frequency （rt） magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K^-1 at 300 K and up to 4.5% K^-1 -7% K^-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.