Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and abs...

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Published inChinese physics B Vol. 24; no. 12; pp. 346 - 351
Main Author 吕海燕 牟奇 张磊 吕元杰 冀子武 冯志红 徐现刚 郭其新
Format Journal Article
LanguageEnglish
Published 01.12.2015
Subjects
Crystals
Diffusion
Excitation
GaAs衬底
Gallium arsenide
MOVPE
Optimization
Photoluminescence
Spectra
Zinc tellurides
ZnTe薄膜
光致发光特性
晶体
束缚激子
深层结构
生长工艺
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Summary:Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.
Bibliography:Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.
photoluminescence,ZnTe bulk crystal,ZnTe epilayer,defect or impurity-related emissions
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/12/124207