Detailed analysis of the capacitance characteristic measured using the pseudo-metal–oxide–semiconductor method

• Published in: Solid-state electronics Vol. 217; p. 108950
• Main Authors: Sato, Shingo, Yuan, Yifan
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2024
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2024.108950

•The decrease in capacitances observed in the standard AC pseudo-MOS method is attributed to the contact resistances originating from both the metal probe and the measurement chuck.•After eliminating the contact resistances, the capacitance characteristics using the Kelvin AC pseudo-MOS method in the low-frequency range were well consistent with the theoretically estimated value.•An apparent increase in the capacitances owing to the channel conduction of the ac signal was observed in the intermediate frequency range. This paper discusses the capacitance–voltage (C–V) characteristics of a silicon-on-insulator (SOI) wafer obtained using the alternating current (AC) pseudo-metal–oxide–semiconductor (MOS) method. This study clarified that the C–V characteristics measured using the standard configuration of the AC pseudo-MOS method were strongly ruled by the condition of both the top and back contacts. Using a distinctive setup referred to as the Kelvin AC pseudo-MOS method, coupled with specific treatments applied to the wafer, we acquired C–V and impedance-related characteristics that differed from the standard configuration and aligned with the theoretical expectation for the entire range of measurement frequencies below a few megahertz. In addition, this study demonstrated the qualitative behavior of the frequency-dependent capacitance with the channel conduction of carriers using an analytical model.