Determination of ion quantity by using low-temperature ion density theory and molecular dynamics simulation

In this paper, we report a method by which the ion quantity is estimated rapidly with an accuracy of 4%. This finding is based on the low-temperature ion density theory and combined with the ion crystal size obtained from experiment with the precision of a micrometer. The method is objective, straig...

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Published inChinese physics B Vol. 24; no. 11; pp. 244 - 249
Main Author 杜丽军 宋红芳 李海霞 陈邵龙 陈婷 孙焕尧 黄垚 童昕 管桦 高克林
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Crystals
Density
Dynamic tests
Evolution
Micrometers
Molecular dynamics
Simulation
Temporal logic
低温
分子动力学仿真
分子动力学模拟
密度理论
晶体尺寸
模拟测定
离子晶体
空间结构
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/11/113703

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Summary:In this paper, we report a method by which the ion quantity is estimated rapidly with an accuracy of 4%. This finding is based on the low-temperature ion density theory and combined with the ion crystal size obtained from experiment with the precision of a micrometer. The method is objective, straightforward, and independent of the molecular dynamics （MD） simulation. The result can be used as the reference for the MD simulation, and the method can improve the reliability and precision of MD simulation. This method is very helpful for intensively studying ion crystal, such as phase transition, spatial configuration, temporal evolution, dynamic character, cooling efficiency, and the temperature limit of the ions.
Bibliography:11-5639/O4
ion crystal, ion quantity, low-temperature density model, molecular dynamics simulation
In this paper, we report a method by which the ion quantity is estimated rapidly with an accuracy of 4%. This finding is based on the low-temperature ion density theory and combined with the ion crystal size obtained from experiment with the precision of a micrometer. The method is objective, straightforward, and independent of the molecular dynamics （MD） simulation. The result can be used as the reference for the MD simulation, and the method can improve the reliability and precision of MD simulation. This method is very helpful for intensively studying ion crystal, such as phase transition, spatial configuration, temporal evolution, dynamic character, cooling efficiency, and the temperature limit of the ions.
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/11/113703