Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

• Published in: Chinese physics B Vol. 24; no. 12; pp. 587 - 591
• Main Author: 马刘红 韩伟华 王昊 杨香 杨富华
• Format: Journal Article
• Language: English
• Published: 01.12.2015
• Subjects: Charge; Drains; Electric potential; Nanowires; Scattering; Transistors; Trapping; Voltage; 俘获效应; 晶体管; 激光光刻技术; 电子迁移率; 界面电荷; 纳米线; 表面层; 重掺杂

We investigate the conductivity characteristics in the surface accumulation layer of a junctionless nanowire transistor fabricated by the femtosecond laser lithography on a heavily n-doped silicon-on-insulator wafer. The conductivity of the accumulation region is totally suppressed when the gate vol...