Nano-photonic crystal formation on highly-doped n-type silicon
We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current de...
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| Published in | Optoelectronics letters Vol. 11; no. 1; pp. 10 - 12 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Heidelberg
Tianjin University of Technology
2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1673-1905 1993-5013 |
| DOI | 10.1007/s11801-015-4181-4 |
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| Abstract | We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model（CBM） is employed to interpret the mechanism of the formation of the macropore porous silicon. |
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| AbstractList | We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon (PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model (CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon. We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model（CBM） is employed to interpret the mechanism of the formation of the macropore porous silicon. |
| Author | 钟福如 贾振红 |
| AuthorAffiliation | College of Information Science and Technology, Shihezi University, Shihezi 832003, China College of Information Science and Engineering, Xinjiang University, Urumqi 830046, China |
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| CitedBy_id | crossref_primary_10_1016_j_mee_2018_07_008 crossref_primary_10_1016_j_ijleo_2018_01_118 |
| Cites_doi | 10.1002/pssa.200674379 10.1134/S1063782611050113 10.1016/j.electacta.2008.04.045 10.1063/1.2402327 10.1134/S1063782612080131 10.1016/j.elecom.2010.02.010 10.1002/adfm.200701494 10.1007/s11801-013-2352-8 |
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| Copyright | Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
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| Keywords | Space Charge Region Distribute Bragg Reflector Field Emission Scanning Electron Microscopy Image Porous Silicon Photonic Crystal |
| Language | English |
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| Notes | photocatalytic glycol irradiation ultraviolet orange hydroxyl visible hydrothermal tetragonal desorption 12-1370/TN We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model（CBM） is employed to interpret the mechanism of the formation of the macropore porous silicon. ZHONG Fu-ru , JIA Zhen-hong （ 1. College of Information Science and Technology, Shihezi University, Shihezi 832003, China 2. College of Information Science and Engineering, Xinjiang University, Urumqi 830046, China |
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| PublicationTitle | Optoelectronics letters |
| PublicationTitleAbbrev | Optoelectron. Lett |
| PublicationTitleAlternate | Opto-electronics Letters |
| PublicationYear | 2015 |
| Publisher | Tianjin University of Technology |
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| References | GarahanAPilonLYinJSaxenaIJournal of Applied Physics2007101143202007JAP...101A4320G10.1063/1.2402327 GeD HJiaoJ WZhangSWangY LElectrochemistry Communications20101260310.1016/j.elecom.2010.02.010 AlvarezS DSchwartzM PMiglioriBRangC UChaoLSailorM JPhysica Status Solidi A: Applications and Materials Science200720414392007PSSAR.204.1439A10.1002/pssa.200674379 DubeyR SGautamD KOptoelectronics and Advanced Materials-Rapid Communications20071436 GoncharK AMusabekG KTaurbayevT ITimoshenkoV YSemiconductors2011456142011Semic..45..614G10.1134/S1063782611050113 WangC-fLiJJournal of Optoelectronics·Laser2014251129 LenshinA SKashkarovV MSeredinP VMinakovD AAgapovB LKuznetsovaM AMoshnikovV ADomashevskayaE PSemiconductors20124610792012Semic..46.1079L10.1134/S1063782612080131 HarrazF AEl-SheikhS MSakkaTOgataY HElectrochimica Acta200853644410.1016/j.electacta.2008.04.045 CarstensenJChristophersenMHasseGFöllHJournal of the Electrochemical Society200018263 RuminskiA MMooreM MSailorM JAdvanced Functional Materials200818341810.1002/adfm.200701494 ZhongF-rLüX-yJiaZ-hTianMOptoelectronics Letters201391052013OptEL...9..105Z10.1007/s11801-013-2352-8 K A Gonchar (4181_CR2) 2011; 45 F A Harraz (4181_CR7) 2008; 53 R S Dubey (4181_CR10) 2007; 1 J Carstensen (4181_CR11) 2000; 182 A M Ruminski (4181_CR3) 2008; 18 C-f Wang (4181_CR4) 2014; 25 D H Ge (4181_CR8) 2010; 12 A Garahan (4181_CR9) 2007; 101 F-r Zhong (4181_CR5) 2013; 9 S D Alvarez (4181_CR1) 2007; 204 A S Lenshin (4181_CR6) 2012; 46 |
| References_xml | – reference: CarstensenJChristophersenMHasseGFöllHJournal of the Electrochemical Society200018263 – reference: GarahanAPilonLYinJSaxenaIJournal of Applied Physics2007101143202007JAP...101A4320G10.1063/1.2402327 – reference: LenshinA SKashkarovV MSeredinP VMinakovD AAgapovB LKuznetsovaM AMoshnikovV ADomashevskayaE PSemiconductors20124610792012Semic..46.1079L10.1134/S1063782612080131 – reference: HarrazF AEl-SheikhS MSakkaTOgataY HElectrochimica Acta200853644410.1016/j.electacta.2008.04.045 – reference: ZhongF-rLüX-yJiaZ-hTianMOptoelectronics Letters201391052013OptEL...9..105Z10.1007/s11801-013-2352-8 – reference: AlvarezS DSchwartzM PMiglioriBRangC UChaoLSailorM JPhysica Status Solidi A: Applications and Materials Science200720414392007PSSAR.204.1439A10.1002/pssa.200674379 – reference: GoncharK AMusabekG KTaurbayevT ITimoshenkoV YSemiconductors2011456142011Semic..45..614G10.1134/S1063782611050113 – reference: DubeyR SGautamD KOptoelectronics and Advanced Materials-Rapid Communications20071436 – reference: WangC-fLiJJournal of Optoelectronics·Laser2014251129 – reference: RuminskiA MMooreM MSailorM JAdvanced Functional Materials200818341810.1002/adfm.200701494 – reference: GeD HJiaoJ WZhangSWangY LElectrochemistry Communications20101260310.1016/j.elecom.2010.02.010 – volume: 204 start-page: 1439 year: 2007 ident: 4181_CR1 publication-title: Physica Status Solidi A: Applications and Materials Science doi: 10.1002/pssa.200674379 – volume: 182 start-page: 63 year: 2000 ident: 4181_CR11 publication-title: Journal of the Electrochemical Society – volume: 45 start-page: 614 year: 2011 ident: 4181_CR2 publication-title: Semiconductors doi: 10.1134/S1063782611050113 – volume: 53 start-page: 6444 year: 2008 ident: 4181_CR7 publication-title: Electrochimica Acta doi: 10.1016/j.electacta.2008.04.045 – volume: 101 start-page: 14320 year: 2007 ident: 4181_CR9 publication-title: Journal of Applied Physics doi: 10.1063/1.2402327 – volume: 46 start-page: 1079 year: 2012 ident: 4181_CR6 publication-title: Semiconductors doi: 10.1134/S1063782612080131 – volume: 12 start-page: 603 year: 2010 ident: 4181_CR8 publication-title: Electrochemistry Communications doi: 10.1016/j.elecom.2010.02.010 – volume: 1 start-page: 436 year: 2007 ident: 4181_CR10 publication-title: Optoelectronics and Advanced Materials-Rapid Communications – volume: 18 start-page: 3418 year: 2008 ident: 4181_CR3 publication-title: Advanced Functional Materials doi: 10.1002/adfm.200701494 – volume: 25 start-page: 1129 year: 2014 ident: 4181_CR4 publication-title: Journal of Optoelectronics·Laser – volume: 9 start-page: 105 year: 2013 ident: 4181_CR5 publication-title: Optoelectronics Letters doi: 10.1007/s11801-013-2352-8 |
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| Snippet | We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous... We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon... |
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| SubjectTerms | Lasers n型硅 Optical Devices Optics Photonics Physics Physics and Astronomy 光子晶体 多孔硅 氧化过程 电化学技术 电流密度 纳米 高掺杂 |
| Title | Nano-photonic crystal formation on highly-doped n-type silicon |
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