Nano-photonic crystal formation on highly-doped n-type silicon

We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current de...

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Bibliographic Details
Published inOptoelectronics letters Vol. 11; no. 1; pp. 10 - 12
Main Author 钟福如 贾振红
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 2015
Subjects
Lasers
n型硅
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
光子晶体
多孔硅
氧化过程
电化学技术
电流密度
纳米
高掺杂
Space Charge Region
Distribute Bragg Reflector
Field Emission Scanning Electron Microscopy Image
Porous Silicon
Photonic Crystal
Online AccessGet full text
ISSN1673-1905
1993-5013
DOI10.1007/s11801-015-4181-4

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Summary:We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model（CBM） is employed to interpret the mechanism of the formation of the macropore porous silicon.
Bibliography:photocatalytic glycol irradiation ultraviolet orange hydroxyl visible hydrothermal tetragonal desorption
12-1370/TN
We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon（PSi） layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model（CBM） is employed to interpret the mechanism of the formation of the macropore porous silicon.
ZHONG Fu-ru , JIA Zhen-hong （ 1. College of Information Science and Technology, Shihezi University, Shihezi 832003, China 2. College of Information Science and Engineering, Xinjiang University, Urumqi 830046, China
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-015-4181-4