Electronic properties of the SnSe-metal contacts： First-principles study

The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolaye...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 24; no. 11; pp. 473 - 477
Main Author 戴宪起 王小龙 李伟 王天兴
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Electronic properties
Gold
IP结构
Mathematical analysis
Monolayers
Silver
Tantalum
几何结构
单层薄膜
电子性质
第一原理计算
第一性原理
肖特基接触
金属接触
Online AccessGet full text

Cover

More Information
Summary:The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.
Bibliography:The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.
11-5639/O4
first-principles, monolayer SnSe, metal-semiconductor contact, current-in-plane structure
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/11/117308