Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs

• Published in: Physica. B, Condensed matter Vol. 405; no. 9; pp. 2185 - 2188
• Main Authors: Villada, J.A., Jiménez-Sandoval, S., López-López, M., Baños, L., Rodríguez-García, M.E.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01.05.2010; Elsevier
• Subjects: Composition; defects and impurities; Condensed matter: structure, mechanical and thermal properties; Defects; Density; Diffraction; Exact sciences and technology; Gallium arsenide; Grazing; Grazing incident X-ray diffraction; Oval defects; Physics; Silicon; Silicon doped GaAs; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-rays; Silicon doped GaAs; Oval defects; Grazing incident X-ray diffraction; Defect density; Scanning electron microscopy; Gallium arsenides; Grazing incidence; Doping; XRD; Silicon additions; Surface defect; Molecular beam epitaxy; Defect structure
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2010.02.003

Grazing incident X-ray diffraction is used to study oval defects on the surface of silicon doped GaAs layers grown by means of molecular beam epitaxy. The amplitude of the (1 1 3) peak from the diffraction data is associated with the defect density obtained from scanning electron microscopy images. These images reveal two different kinds of defects for all samples. It was proven that variations in the silicon effusion cell temperature affect the defect density. By increasing the cell temperature the defect density increases.