Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator

• Published in: Journal of electroceramics Vol. 23; no. 1; pp. 76 - 79
• Main Authors: Kim, Young-Bae, Kim, Jeong-Ung, Choi, Duck-Kyun, Hong, Jae-Min, Kim, Il-Doo
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.08.2009; Springer Nature B.V
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composites; Crystallography and Scattering Methods; Electrochemistry; Glass; Materials Science; Natural Materials; Optical and Electronic Materials; Gate insulator; Transistor; ZnO; Low voltage operation
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-008-9538-7

We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba 0.6 Sr 0.4 TiO 3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6 × 10 −9  A/cm, as compared to a current density of 5 × 10 −4  A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm 2 V/s, 1.2 × 10 6 , and 0.21 V/dec respectively.