Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Pattem imprinting in deep sub-micron static random access memories （SRAMs） during total dose irradiation is inves- tigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 10; pp. 362 - 368
Main Author 郑齐文 余学峰 崔江维 郭旗 任迪远 丛忠超 周航
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
Background noise
Construction
Devices
Gates
Irradiation
Oxides
Probability density functions
SRAM
Static random access memory
Trapping
压印
图案
总剂量
概率密度函数
深亚微米器件
照射
静态随机存取存储器
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Summary:Pattem imprinting in deep sub-micron static random access memories （SRAMs） during total dose irradiation is inves- tigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell＇s static noise margin （SNM） and the background data, and study the influence of irradiation on the probability density function of ASNM, which is the difference between two data sides＇ SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation （STI） oxide rather than from the gate oxide of the micron-device.
Bibliography:total dose irradiation, static random access memory, pattern imprinting, deep sub-micron
Zheng Qi-Wen, Yu Xue-Feng, Cui Jiang-Wei, Guo Qi, Ren Di-Yuan, Chug Zhong-Chao, and Zhou Hang（a） Key Laboratory of Fanctional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ummqi 830011, China b） Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China c） University of Chinese Academy of Sciences, Beijing 100049, China
11-5639/O4
Pattem imprinting in deep sub-micron static random access memories （SRAMs） during total dose irradiation is inves- tigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell＇s static noise margin （SNM） and the background data, and study the influence of irradiation on the probability density function of ASNM, which is the difference between two data sides＇ SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation （STI） oxide rather than from the gate oxide of the micron-device.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/10/106102