The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

• Published in: Journal of semiconductors Vol. 35; no. 11; pp. 51 - 58
• Main Author: 王伟 张露 王雪莹 王竹兵 张婷 李娜 杨晓 岳工舒
• Format: Journal Article
• Language: English
• Published: 01.11.2014
• Subjects: Doping; Drains; Halos; Leakage current; Poisson equation; Semiconductors; Switching; Two dimensional; 卤素; 合作; 开关性能; 弹道; 掺杂; 线性; 非平衡格林函数; 高频

To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non...