The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non...

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Published inJournal of semiconductors Vol. 35; no. 11; pp. 51 - 58
Main Author 王伟 张露 王雪莹 王竹兵 张婷 李娜 杨晓 岳工舒
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Doping
Drains
Halos
Leakage current
Poisson equation
Semiconductors
Switching
Two dimensional
卤素
合作
开关性能
弹道
掺杂
线性
非平衡格林函数
高频
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Summary:To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green＇s functions solved self-consistently with Poisson＇s equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET. It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio, and that linear doping can improve high-frequency and switching performance.
Bibliography:CNTFET; NEGF; Halo doping; SCE; linear doping
To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green＇s functions solved self-consistently with Poisson＇s equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET. It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio, and that linear doping can improve high-frequency and switching performance.
11-5781/TN
Wang Wei, Zhang Lu, Wang Xueying, Wang Zhubing, Zhang Ting, Li Na, Yang Xiao, Yue Gongshu（ 1 College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China 2College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/114004