Effects of initial growth mode on the electrical properties of atomic-layer-deposited Hfo2 films

• Published in: Electronic materials letters Vol. 5; no. 4; pp. 187 - 190
• Main Author: Chang, Hyo Sik
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.12.2009; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; 전자/정보통신공학; initial growth; HfO; atomic layer deposition; HfCl; medium-energy ion scattering
• ISSN: 1738-8090; 2093-6788
• DOI: 10.3365/eml.2009.12.187

The effects of the initial growth mode on the electrical properties of atomic layer deposition-grown HfO 2 / SiO 2 /Si metal-oxide-semiconductor devices were investigated using in-situ medium energy ion scattering (MEIS). MEIS results clearly showed that wet chemical oxide has a more layer-like growth at an initial growth stage than a thermal oxide starting surface. On the high OH group surface, less shifting of the flat band voltage and mininal hysteresis in the C-V curve was observed primarily due to structural uniformity in the HfO 2 dielectric. The method of surface preparation directly influenced the growth morphologies. These morphologies at the initial growth stage strongly affected C-V quality and charge trapping.