Surface roughness of optical quartz substrate by chemical mechanical polishing

In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process parameters including pressure, polishing head speed, platen speed, slurry flow rate, polishin...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 11; pp. 168 - 172
Main Author 段波 周建伟 刘玉岭 孙铭斌 张玉峰
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Flow rate
Mechanical polishing
Platens
Polishing
Semiconductors
Slurries
Surface roughness
Titanium dioxide
二氧化钛
光学
减反射膜
化学机械抛光
工艺参数
玻璃基板
石英衬底
表面粗糙度
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ISSN1674-4926
DOI10.1088/1674-4926/35/11/116001

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Summary:In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process parameters including pressure, polishing head speed, platen speed, slurry flow rate, polishing time, and slurry temperature were optimized to obtain lower quartz surface roughness. According to the experiment results, when pressure was 0.75 psi, polishing head speed was 65 rpm, platen speed was 60 rpm, slurry flow rate 150 mL/min, slurry temperature 20℃, and polishing time was 60 s, the material removal rate （MRR） was 56.8 nm/min and the surface roughness （Ra） was 1.93 A （the scanned area was 10 × 10 μm^2）. These results were suitable for the industrial production requirements.
Bibliography:In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process parameters including pressure, polishing head speed, platen speed, slurry flow rate, polishing time, and slurry temperature were optimized to obtain lower quartz surface roughness. According to the experiment results, when pressure was 0.75 psi, polishing head speed was 65 rpm, platen speed was 60 rpm, slurry flow rate 150 mL/min, slurry temperature 20℃, and polishing time was 60 s, the material removal rate （MRR） was 56.8 nm/min and the surface roughness （Ra） was 1.93 A （the scanned area was 10 × 10 μm^2）. These results were suitable for the industrial production requirements.
11-5781/TN
quartz substrate; surface roughness; removal rate; CMP; process parameters
Duan Bo, Zhou Jianwei, Liu Yuling, Sun Mingbin, Zhang Yufeng（Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/116001