Bottleneck effects due to confined phonons in quantum dots

• Published in: Superlattices and microstructures Vol. 13; no. 4; p. 481
• Main Authors: dela Cruz, R.M., Teitsworth, S.W., Stroscio, M.A.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.01.1993; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in condensed matter; Electronic transport in interface structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; General theory, scattering mechanisms; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; Physics; Scattering by phonons, magnons, and other nonlocalized excitations; Theory of electronic transport; scattering mechanisms; Bottleneck; Froehlich interactions; Gallium arsenides; Inorganic compounds; Semiconductor materials; Quantum dots; Scattering; Phonons; Theoretical study; Binary compounds; Selection rules; Electron-phonon coupling; Hamiltonians
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.1993.1090

A generalization of the three-dimensional Fröhlich hamiltonian for a polar semiconductor is presented which describes the interaction between charge carriers of a zero-dimensional electron gas and longitudinal optical (LO) phonon modes confined in three spatial dimensions. This hamiltonian is used to calculate the scattering rate of electrons by LO phonons in a GaAs quantum box which is free-standing in vacuum. The suppression of scattering through a phonon bottleneck effect is discussed in terms of the selection rules.