Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state c...

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Published inChinese physics B Vol. 24; no. 11; pp. 406 - 409
Main Author 杨铭 林兆军 赵景涛 王玉堂 李志远 吕元杰 冯志红
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Aluminum nitride
Bias
Buffer layers
Field effect transistors
Gallium nitrides
Heterostructures
HFET
Semiconductor devices
Switching
偏置
开关特性
异质结场效应晶体管
流状态
电流比
相互作用
衬底偏压
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/11/117103

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Summary:A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.
Bibliography:A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.
AlaN/GaN heterostructure field effect transistors （HFETs）, switching characteristics, substratebias
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/11/117103