Three dimensional integration of waveguides in bulk silicon

We demonstrated the ability to achieve three-dimensional (3D) vertical stacking of waveguides in bulk silicon using proton beam irradiation with electrochemical etching in hydrofluoric acid. With low fluence irradiation, the ion beam acts to selectively stop etching only at the end-of-range, resulti...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 102; pp. 29 - 32
Main Authors Teo, E.J., Xiong, B.Q.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2013
Subjects
Construction
Devices
Economics
Ion beam
Irradiation
Silicon
Silicon photonics
Stacking
Three dimensional
Waveguides
Ion beam
Waveguides
Silicon photonics
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Summary:We demonstrated the ability to achieve three-dimensional (3D) vertical stacking of waveguides in bulk silicon using proton beam irradiation with electrochemical etching in hydrofluoric acid. With low fluence irradiation, the ion beam acts to selectively stop etching only at the end-of-range, resulting in a silicon core that is embedded in porous silicon cladding. By using the well-defined ion path, we are able to build a 2 and 3 level waveguide systems with single and double energy irradiation through a patterned mask respectively. This means more devices can be packed densely on a single chip for greater functionality and economic returns.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.02.008