Effects of interfaces and interface roughness in diluted magnetic semiconductor microstructures

• Published in: Superlattices and microstructures Vol. 16; no. 1; pp. 11 - 15
• Main Authors: Stirner, T., Fatah, J.M., Roberts, R.G., Piorek, T., Hagston, W.E., Harrison, P.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.01.1994; Elsevier
• Subjects: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations); Collective excitations (including plasmons and other charge-density excitations); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ii-vi semiconductors; Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures); Magnetic films and multilayers; Magnetic properties and materials; Magnetic properties of surface, thin films and multilayers; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Surface and interface electron states; Inorganic compounds; Manganese tellurides; Ternary compounds; Quantum wells; Transition element compounds; Paramagnetism; Roughness; Theoretical study; Magnetic semiconductors; Interfaces; Zeeman effect; Quantity ratio; Excitons; Cadmium tellurides; Microstructure
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.1994.1100

In this work a numerical model of anti-ferromagnetic spin-pairing in diluted magnetic semiconductors is used to determine the paramagnetic behaviour of both abrupt and rough interfaces. A detailed study of the paramagnetic behaviour of the individual monolayers adjacent to an abrupt interface with a non-magnetic material has not only predicted quantitatively the enhanced paramagnetism in the ultimate monolayer, it has also predicted a depressed paramagnetism in the penultimate monolayer. Furthermore, the results of the theoretical model have been compared with experimental observations in order to gain insight into intrinsic and structural properties of heterojunctions in diluted magnetic semiconductors.