Pixel-level A/D conversion using voltage reset technique

This paper presents a 50 Hz 15-bit analog-to-digital converter (ADC) for pixel-level implementation in CMOS image sensors. The ADC is based on charge packets counting and adopts a voltage reset technique to inject charge packets. The core circuit for charge/pulse conversion is specially optimized fo...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 11; pp. 149 - 153
Main Author 李敏增 李福乐 张春 王志华
Format Journal Article
LanguageEnglish
Published 01.11.2014
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Summary:This paper presents a 50 Hz 15-bit analog-to-digital converter (ADC) for pixel-level implementation in CMOS image sensors. The ADC is based on charge packets counting and adopts a voltage reset technique to inject charge packets. The core circuit for charge/pulse conversion is specially optimized for low power, low noise and small area. An experimental chip with ten pixel-level ADCs has been fabricated and tested for verification. The measurement result shows a standard deviation of 1.8 LSB for full-scale output. The ADC has an area of 45 × 45μm^2 and consumes less than 2 μW in a standard 1P-6M 0.18μm CMOS process.
Bibliography:This paper presents a 50 Hz 15-bit analog-to-digital converter (ADC) for pixel-level implementation in CMOS image sensors. The ADC is based on charge packets counting and adopts a voltage reset technique to inject charge packets. The core circuit for charge/pulse conversion is specially optimized for low power, low noise and small area. An experimental chip with ten pixel-level ADCs has been fabricated and tested for verification. The measurement result shows a standard deviation of 1.8 LSB for full-scale output. The ADC has an area of 45 × 45μm^2 and consumes less than 2 μW in a standard 1P-6M 0.18μm CMOS process.
11-5781/TN
pixel-level analog-to-digital converter (ADC); voltage reset techniaue: low soeed and hieh resolution
Li Minzeng, Li Fule, Zhang Chun, Wang Zhihua( Institute of Microelectronics, Tsinghua University, Beijing 100084, China)
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/115009