Composite behaviors of dual meminductor circuits

This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connec- tions with different polarities. Based on the constitutive relations, two time-integral-of-flux （TIF） controlled meminductors are adopted to theoretically demonstrate the variation of m...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 11; pp. 180 - 195
Main Author 郑辞晏 于东升 梁燕 陈孟科
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Circuits
Dynamic tests
Flux
Hardware
Joints
Polarity
PSPICE仿真
Serials
Simulation
动态行为
复合材料
感器
时间积分
本构关系
电路
硬件实验
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Summary:This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connec- tions with different polarities. Based on the constitutive relations, two time-integral-of-flux （TIF） controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By uti- lizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.
Bibliography:This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connec- tions with different polarities. Based on the constitutive relations, two time-integral-of-flux （TIF） controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By uti- lizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.
11-5639/O4
composite behavior, serial connection, parallel connection, meminductor
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/11/110701