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Fabrication of Through Micro-hole Arrays in Silicon Using Femtosecond Laser Irradiation and Selective Chemical Etching
We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofl...
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Published in | Chinese physics letters Vol. 32; no. 10; pp. 142 - 145 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.10.2015
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Subjects | |
Online Access | Get full text |
ISSN | 0256-307X 1741-3540 |
DOI | 10.1088/0256-307X/32/10/107901 |
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Summary: | We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution. The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy, The effects of the pulse number on the depth and diameter of the holes are investigated. Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated. |
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Bibliography: | 11-1959/O4 We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution. The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy, The effects of the pulse number on the depth and diameter of the holes are investigated. Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/32/10/107901 |