Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD

In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP (1 0 0) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its crystalline quality and optical property, which were characterized by X-ray diffraction, scanning electron micros...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 458; no. 1-2; pp. 363 - 365
Main Authors Zhang, Tiemin, Miao, Guoqing, Jin, Yixin, Jiang, Hong, Li, Zhiming, Song, Hang
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier 30.06.2008
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Buffer layer
Gallium Indium Arsenides
Scanning electron microscopy
Epitaxial layers
Optical properties
In0.82Ga0.18As
Photoluminescence
XRD
81.15.Gh;81.05.Ea
MOCVD
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Summary:In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP (1 0 0) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its crystalline quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the crystalline quality and the optical property of the In0.82Ga0.18As epilayers had close relation to the growth temperature of buffer layer and the optimum buffer's growth temperature was about 450 deg C.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2007.03.104