Disorder-induced enhancement of the persistent current for strongly interacting electrons in one-dimensional rings

We show that disorder increases the persistent current of a half-filled one-dimensional Hubbard-Anderson ring at strong interaction. This unexpected effect results from a perturbative expansion starting from the strongly interacting Mott insulator ground state. The analytical result is confirmed and...

Full description

Saved in:
Bibliographic Details
Published inEurophysics letters Vol. 60; no. 1; pp. 120 - 126
Main Authors Gambetti-Césare, E, Weinmann, D, Jalabert, R. A, Brune, Ph
Format Journal Article
LanguageEnglish
Published Les Ulis IOP Publishing 01.10.2002
EDP Sciences
EDP sciences
Subjects
71.10.Fd
73.23.Ra
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in mesoscopic systems
Exact sciences and technology
Persistent currents
Physics
Perturbation theory
Persistent current
Ground states
Strong interactions
Digital simulation
Theoretical study
Mott transition
Electron interaction
Analytical method
Transport processes
Mesoscopic systems
Matrix elements
One-dimensional systems
Online AccessGet full text

Cover

More Information
Summary:We show that disorder increases the persistent current of a half-filled one-dimensional Hubbard-Anderson ring at strong interaction. This unexpected effect results from a perturbative expansion starting from the strongly interacting Mott insulator ground state. The analytical result is confirmed and extended by numerical calculations.
Bibliography:publisher-ID:7296
ark:/67375/80W-ZRHWCGX5-5
istex:7BFD121E1DA4D85734A5C4B4E2051F3EA03989C5
ISSN:0295-5075
1286-4854
DOI:10.1209/epl/i2002-00328-9