The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film
The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals ar...
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| Published in | Chinese physics B Vol. 22; no. 10; pp. 370 - 374 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.10.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/10/105101 |
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| Abstract | The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD） |
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| AbstractList | The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in poly-Si. The H sub( alpha )with lower energy is mainly responsible for passivating the solid phase crystallization (SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition (PECVD). The H* with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, H sub( beta ) and H sub( gamma ) with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition (LPCVD). The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD） |
| Author | 李娟 罗翀 孟志国 熊绍珍 郭海威 |
| AuthorAffiliation | Institute of Photo-Electronics, Tianjin Key Laboratory [＇or Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China |
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| Cites_doi | 10.1063/1.114877 10.1063/1.92344 10.1088/1674-1056/18/3/066 10.1016/j.solmat.2006.08.008 10.1063/1.95045 10.1063/1.90078 10.1063/1.122208 10.1063/1.91619 10.1063/1.109101 10.1063/1.94375 10.1063/1.1815380 10.1063/1.368887 10.1063/1.116353 10.1063/1.109294 10.1016/0927-796X(95)00178-6 |
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| Notes | hydrogen plasma, passivation, poly-Si, mechanism 11-5639/O4 The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD） ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 Meng Z G (3) 2008; 22 13 14 15 Wu C Y (4) 2009; 18 16 17 1 2 Estreicher S K (8) 1995; R14 5 6 7 9 10 |
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| Snippet | The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined... The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined... |
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| SubjectTerms | Chemical vapor deposition Crystal defects Crystallization Deposition Hydrogen plasma Passivation Precursors Thin films 低压化学汽相淀积 光学发射光谱 多晶硅薄膜 机理 氢等离子体 等离子体增强化学气相沉积 钝化 霍尔迁移率 |
| Title | The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film |
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