The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals ar...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 10; pp. 370 - 374
Main Author 李娟 罗翀 孟志国 熊绍珍 郭海威
Format Journal Article
LanguageEnglish
Published 01.10.2013
Subjects
Chemical vapor deposition
Crystal defects
Crystallization
Deposition
Hydrogen plasma
Passivation
Precursors
Thin films
低压化学汽相淀积
光学发射光谱
多晶硅薄膜
机理
氢等离子体
等离子体增强化学气相沉积
钝化
霍尔迁移率
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/10/105101

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Summary:The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD）
Bibliography:hydrogen plasma, passivation, poly-Si, mechanism
11-5639/O4
The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-Si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD）
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/10/105101