Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate

In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates （PSS） was demonstrated. The short-circuit current （Jsc） density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventi...

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Published inJournal of semiconductors Vol. 34; no. 12; pp. 45 - 48
Main Author 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 候洵
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Gallium nitrides
Indium gallium nitrides
InGaN
Performance enhancement
Photovoltaic cells
Quantum wells
Sapphire
Semiconductors
Solar cells
图案化
基板
增强性能
多量子阱
太阳能电池
氮化铟镓
蓝宝石衬底
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ISSN1674-4926
DOI10.1088/1674-4926/34/12/124004

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Summary:In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates （PSS） was demonstrated. The short-circuit current （Jsc） density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell.
Bibliography:InGaN; pattemed sapphire substrate; solar cell
In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates （PSS） was demonstrated. The short-circuit current （Jsc） density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell.
11-5781/TN
Jing Liang, Xiao Hongling, Wang Xiaoliang, Wang Cuimei, Deng Qingwen, Li Zhidong,Ding Jieqin, Wang Zhanguo, Hou Xun（1.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2.Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China 3 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China 4Xi＇an Jiaotong University, Xi＇an 710049, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/12/124004