Comparative Study on Micromechanical Properties of ZnO:Ga and ZnO:In Luminiscent Ceramics

Indium (0.038 at.%) and gallium (0.042 at.%) doped ZnO ceramics were prepared by hot pressing. Ceramics were investigated to determine their structural and mechanical characteristics for the prospective use in scintillators. Based on results of nanoindentation, atom force and scanning electron micro...

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Bibliographic Details
Published inLatvian journal of physics and technical sciences Vol. 58; no. 1; pp. 23 - 32
Main Authors Muktepavela, F., Zolotarjovs, A., Zabels, R., Kundzins, K., Gorokhova, E., Tamanis, E.
Format Journal Article
LanguageEnglish
Latvian
Russian
Published Riga Sciendo 01.02.2021
De Gruyter Poland
Subjects
Ceramics
Comparative studies
fracture mode
Fracture toughness
Gallium
Grain boundaries
Hardness
Hot pressed ZnO ceramics
Hot pressing
Indium
Mechanical properties
microstructure
Modulus of elasticity
Nanoindentation
Scintillation counters
Stress relaxation
X ray spectra
Zinc oxide
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Summary:Indium (0.038 at.%) and gallium (0.042 at.%) doped ZnO ceramics were prepared by hot pressing. Ceramics were investigated to determine their structural and mechanical characteristics for the prospective use in scintillators. Based on results of nanoindentation, atom force and scanning electron microscopy as well as energy dispersive X-ray spectra measurements, locations of gallium within grain, indium at grain boundaries (GBs) and their different effect on the mechanical properties of ZnO ceramics were detected. Doping of gallium led to the increased modulus of elasticity in grain, decreased hardness near GBs, stabilization of micropores and brittle intercrystalline fracture mode. ZnO:In ceramic has modulus of elasticity and hardness values close to ZnO characteristics, the increased fracture toughness and some plasticity near GBs. Differences in the micromechanical properties of the ceramics correlate with the location of dopants. Results demonstrate that the ZnO:In ceramic has a greater stress relaxation potential than the ZnO:Ga.
ISSN:0868-8257
2199-6156
0868-8257
DOI:10.2478/lpts-2021-0003