A W-band two-stage cascode amplifier with gain of 25.7 dB

AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leadi...

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Published inJournal of semiconductors Vol. 34; no. 12; pp. 72 - 76
Main Author 钟英辉 张玉明 张义门 曹玉雄 姚鸿飞 王显泰 吕红亮 刘新宇 金智
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Amplification
Amplifiers
Coplanar waveguides
Gain
HEMT
High electron mobility transistors
Noise levels
Semiconductor devices
Semiconductors
W波段
双级
小信号增益
波导技术
级联放大器
高电子迁移率晶体管
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ISSN1674-4926
DOI10.1088/1674-4926/34/12/125003

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Summary:AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.
Bibliography:cascode; coplanar waveguide; HEMT; gate-length
11-5781/TN
AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.
Zhong Yinghui, Zhang Yuming, Zhang Yimen, Cao Yuxiong, Yao Hongfei, Wang Xiantai, Lu Hongliang, Liu Xinyu, Jin Zhi（1 School of Microelectronics, Xidian University, Xi＇an 710071, China 2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/12/125003