Probing charge traps at the 2D semiconductor/dielectric interface

• Published in: Nanoscale Vol. 15; no. 42; pp. 16818 - 16835
• Main Authors: John, John Wellington, Mishra, Abhishek, Debbarma, Rousan, Verzhbitskiy, Ivan, Goh, Kuan Eng Johnson
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 02.11.2023
• Subjects: Dielectrics; Electrical properties; Interfaces; LF noise; Measurement methods; Semiconductor devices; Semiconductors

The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional diele...