Probing charge traps at the 2D semiconductor/dielectric interface
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional diele...
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| Published in | Nanoscale Vol. 15; no. 42; pp. 16818 - 16835 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Cambridge
Royal Society of Chemistry
02.11.2023
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps,
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, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify
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at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of
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at 2D semiconductor/dielectric interfaces.
The presence of charge traps at the 2D semiconductor/dielectric interface poses a significant obstacle for device optimisation. Hence, methods to accurately measure and assess these interface traps are in demand. |
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| Bibliography: | Dr Ivan Verzhbitskiy is a Senior Scientist at the Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR, Singapore). He received his B.Sc. and M.Sc. degrees in Physics and completed his Ph.D. at the University of Angers (CNRS, France) in 2011. After a 2-year postdoctoral position at the Free University of Berlin, he moved to the National University of Singapore as a Senior Research Fellow and later joined A*STAR as a Senior Scientist. His main research interests are focused on the electronic and optical properties of quantum materials and their application to quantum logic hardware. John Wellington John is a Scientist at the Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR, Singapore). After receiving his MTech in 2017, he completed his Ph.D at the Indian Institute of Technology Delhi, India in 2022 where his research focused on infrared detectors based on Group IV semiconductors and their heterostructures with 2D materials. His research interests primarily revolve around layered materials and their applications in electronics and optics. Abhishek Mishra is a Scientist at the Institute of Materials Research and Engineering, A*STAR, Singapore. His research interests include 1D/2D material-based devices for Beyond-CMOS applications, the operational reliability of semiconductor devices and ultra-wide bandgap semiconductors for power semiconductor devices. He did his doctoral work at the Indian Institute of Science Bangalore, India, exploring the reliability of 1D/2D material-based semiconductor devices. Previously, he was part of a research team at the Center for Device Thermography and Reliability, University of Bristol, UK, exploring ultra-wide bandgap semiconductors for power semiconductor devices. He is actively involved in exploring novel dielectrics and metal contacts for 1D/2D material-based devices. Rousan Debbarma obtained his Ph.D. in Chemical Engineering from the University of Illinois at Chicago, where his research focused on two-dimensional nanomaterials and their heterostructures, with an emphasis on investigating their optoelectronic properties. Subsequently, as a postdoctoral researcher at Lund University in Sweden, within the Division of Solid State Physics, he delved into quantum transport in coupled quantum dots and explored superconductor-quantum dot hybrid structures, with a particular focus on the study of spin and orbital transport. Professor Kuan Eng Johnson Goh is the Division Director and Senior Principal Scientist at the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore. He is Adjunct Professor at the School of Physical and Mathematical Sciences, Nanyang Technological University (NTU), Singapore. He also serves as the Director of the Quantum Engineering Programme funded by the National Research Foundation, Singapore. He holds a PhD in Physics (2007) from the University of New South Wales, Australia. His current research interests are in quantum computation, valleytronics, and quantum effect devices. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Review-3 content type line 23 |
| ISSN: | 2040-3364 2040-3372 2040-3372 |
| DOI: | 10.1039/d3nr03453d |