Atomic populations of copper and gold in a room-temperature metal vapor laser
Sputtering in the presence of a rapid flow of gas can project a column of metal vapor with a mean Cu i ground-state concentration along the optical axis of about 3×1014 cm−3. The effective gain length using a single cathode is limited to about 20 cm for both Cu i and Au i, due to the radial expansio...
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Published in | Journal of applied physics Vol. 66; no. 7; pp. 2794 - 2799 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Woodbury, NY
American Institute of Physics
01.10.1989
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Subjects | |
Online Access | Get full text |
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Summary: | Sputtering in the presence of a rapid flow of gas can project a column of metal vapor with a mean Cu i ground-state concentration along the optical axis of about 3×1014 cm−3. The effective gain length using a single cathode is limited to about 20 cm for both Cu i and Au i, due to the radial expansion of the metal vapor column. The laser has been studied for double pulsed operation during a single sputtering pulse. The ratio of the peak power for the second laser pulse to that of the first, ρ, increases with interpulse delay from zero at short delays to a constant value which is less than or equal to unity. The buildup of ρ occurs on a 700-μs time scale due to the residual ionization resulting from the first discharge pulse. The constant value decreases with increasing capacitor voltage for both the Cu i and Au i lines due to the radial flow of metal atoms from the optical cavity, which results from the transient heating of the metal vapor column. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.344206 |