Design of terahertz band-stop filter based on a metallic resonator on high-resistivity silicon wafer
In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident di- rection of electric field with respect to...
Saved in:
Published in | Science China. Technological sciences Vol. 56; no. 9; pp. 2238 - 2242 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.09.2013
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident di- rection of electric field with respect to the T-shaped resonator. When the long and the short arms of the T-shaped resonator were electrically polarized by changing the incident THz wave transmission directions, the corresponding central frequencies of the band-stop filter were found to be 0.436 THz at -42dB and 0.610 THz at -28 dB, respectively. Using three-dimensional (3D) finite-integral time-domain simulations, the band-stop filter was designed, which can operate in the wavelength between 0.2 and 0.8 THz. Experimental verification was also performed using a free space THz time-domain spectroscopy system. The band-stop response characteristics are in good agreement with the simulation results. The interesting THz band-stop filtering properties suggest a promising application in the modern THz communication systems, THz time-domain spectroscopic imag- ing and THz continuous wave imaging. |
---|---|
Bibliography: | band-stop filter, finite-integral time-domain, terahertz filter, T-shaped resonator, terahertz time-domain spectroscopy In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident di- rection of electric field with respect to the T-shaped resonator. When the long and the short arms of the T-shaped resonator were electrically polarized by changing the incident THz wave transmission directions, the corresponding central frequencies of the band-stop filter were found to be 0.436 THz at -42dB and 0.610 THz at -28 dB, respectively. Using three-dimensional (3D) finite-integral time-domain simulations, the band-stop filter was designed, which can operate in the wavelength between 0.2 and 0.8 THz. Experimental verification was also performed using a free space THz time-domain spectroscopy system. The band-stop response characteristics are in good agreement with the simulation results. The interesting THz band-stop filtering properties suggest a promising application in the modern THz communication systems, THz time-domain spectroscopic imag- ing and THz continuous wave imaging. 11-5845/TH |
ISSN: | 1674-7321 1869-1900 |
DOI: | 10.1007/s11431-013-5289-z |