GaN nanopillars with a nickel nano-island mask

Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 10^8 cm^-2 were demonstrated and controlled by the thickness of...

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Published inJournal of semiconductors Vol. 34; no. 12; pp. 21 - 25
Main Author 林增钦 修向前 张世英 华雪梅 谢自力 张荣 陈鹏 韩平 郑有炓
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Density
Etching
Gallium nitrides
GaN薄膜
ICP刻蚀
Inductively coupled plasma
Masks
Nanostructure
Nickel
Semiconductors
发光二极管
氮化镓
等离子体刻蚀
纳米柱
镍
面膜
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Summary:Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 10^8 cm^-2 were demonstrated and controlled by the thickness of Ni film and the NH3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.
Bibliography:GaN nanopillars; nickel nano-island; thermal ammonia etching; mask; ICP; SEM
Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 10^8 cm^-2 were demonstrated and controlled by the thickness of Ni film and the NH3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.
Lin Zengqin, Xiu Xiangqian, Zhang Shiying, Hua Xuemei, Xie Zili, Zhang Rong, Chen Peng, Han Ping, and Zheng Youdou（Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanj ing 210093, China）
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/12/123001