Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducin...

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Published inChinese physics B Vol. 22; no. 12; pp. 503 - 508
Main Author 龚伟 徐征 赵谡玲 刘晓东 樊星 杨倩倩 孔超
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Buffer layers
Charge
Charge transport
Collection
Devices
Insertion
MEH-PPV
NPB
Simulation
Thin films
Zinc oxide
太阳能电池
收集
氧化锌
混合设备
电荷传输
缓冲层
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Summary:We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.
Bibliography:Gong Weia b, Xu Zhenga b, Zhao Su-Linga b, Liu Xiao-Donga b, Fan Xinga b, Yang Qian-Qiana b, Kong Chaoa b （a Key Laboratory of Luminescence and Optical Information （Beijing Jiaotong University）, Ministry of Education, Beijing 100044, China;b Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China ）
We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.
11-5639/O4
NPB capacitance–voltage measurement charge collection buffer layer
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/12/128402