An InP-based heterodimensional Schottky diode for terahertz detection

We present an InP-based heterodimensional Schottky diode（HDSD）,which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration...

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Published inJournal of semiconductors Vol. 33; no. 10; pp. 29 - 32
Main Author 闻孺铭 孙浩 滕腾 李凌云 孙晓玮
Format Journal Article
LanguageEnglish
Published 01.10.2012
Subjects
2DEG
Barriers
Electron gas
GaAs
High frequencies
InP基
Schottky diodes
Semiconductors
Two dimensional
二维电子气
太赫兹波
操作条件
检测
肖特基二极管
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ISSN1674-4926
DOI10.1088/1674-4926/33/10/104001

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Summary:We present an InP-based heterodimensional Schottky diode（HDSD）,which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration of 2D electron gas（2DEG） as well as its smaller Schottky barrier height.The cutoff frequency of the InP-based HDSD obtained by the AC measurement is more than 500 GHz,which shows its potential application in terahertz detection.
Bibliography:We present an InP-based heterodimensional Schottky diode（HDSD）,which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration of 2D electron gas（2DEG） as well as its smaller Schottky barrier height.The cutoff frequency of the InP-based HDSD obtained by the AC measurement is more than 500 GHz,which shows its potential application in terahertz detection.
Wen Ruming,Sun Hao,Teng Teng,Li Lingyun, Sun Xiaowei（ 1 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China 2 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China）
Schottky barrier diode; heterodimensional Schottky diode; InP; terahertz detection
11-5781/TN
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/33/10/104001