Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath

Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height（SBH） to be modulated.Chemical baths with 1-octadecene,1-hexadecene,1-tetradecene,and 1- dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penet...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 10; pp. 16 - 20
Main Author 王巍 王敬 赵梅 梁仁荣 许军
Format Journal Article
LanguageEnglish
Published 01.10.2012
Subjects
Fermi level
Fermi surfaces
Free electrons
Germanium
Insertion
Plugs
Semiconductors
Wave functions
八碳烯
化学
结构
自由电子
费米能级
金属诱导
钉扎
锗
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ISSN1674-4926
DOI10.1088/1674-4926/33/10/102004

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Summary:Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height（SBH） to be modulated.Chemical baths with 1-octadecene,1-hexadecene,1-tetradecene,and 1- dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge.Metal-induced gap states are alleviated and the pinned Fermi level is released.The SBH is lowered to 0.17 eV.This new formation method is much less complex than traditional ones,and the result is very good.
Bibliography:Wang Wei,Wang Jing,Zhao Mei,Liang Renrong and Xu Jun Institute of Microelectronics,Tsinghua University,Beijing 100084,China
11-5781/TN
Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height（SBH） to be modulated.Chemical baths with 1-octadecene,1-hexadecene,1-tetradecene,and 1- dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge.Metal-induced gap states are alleviated and the pinned Fermi level is released.The SBH is lowered to 0.17 eV.This new formation method is much less complex than traditional ones,and the result is very good.
Schottky barrier; Fermi level pinning; chemical bath; blocking layer
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/10/102004