High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

• Published in: Journal of crystal growth Vol. 272; no. 1-4; pp. 377 - 380
• Main Authors: KAWASHIMA, Takeshi, IIDA, Kazuyoshi, MIYAKE, Yasuto, HONSHIO, Akira, KASUGAI, Hideki, IMURA, Masataka, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 10.12.2004
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Electronics; Exact sciences and technology; Light-emitting devices; Linear defects: dislocations, disclinations; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure of solids and liquids; crystallography; Vapor phase epitaxy; growth from vapor phase; Ternary compound; Atomic force microscopy; Voltage current curve; B1. Nitrides; VPE; Crystal growth from vapors; Cathodoluminescence; Gallium nitride; Emission spectrum; B2. Semiconducting III-V materials; Inorganic compound; Thin film; Dislocation density; 85.60Jb A3. Organometallic vapor phase epitaxy; Buffer layer; Scanning electron microscopy; Aluminium nitride; Experimental study; 78.66Fd; A3. Selective epitaxy; B3. Light-emitting diodes; Light emitting diode; Faceting; Transmission electron microscopy; MOVPE method; 78.55Cr; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.08.101

To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed using facet-controlled technology, and does not contain any GaN layer. As a result, the density of the threading dislocations in the overgrown AlGaN is as low as 5X107cm-2 over the entire wafer.