High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed...
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Published in | Journal of crystal growth Vol. 272; no. 1-4; pp. 377 - 380 |
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Main Authors | , , , , , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Amsterdam
Elsevier
10.12.2004
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Subjects | |
Online Access | Get full text |
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Summary: | To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed using facet-controlled technology, and does not contain any GaN layer. As a result, the density of the threading dislocations in the overgrown AlGaN is as low as 5X107cm-2 over the entire wafer. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.08.101 |