Cupric oxide decked few-layered graphene: Synthesis and dielectric behaviour

• Published in: Carbon (New York) Vol. 78; pp. 374 - 383
• Main Authors: RAMA KRISHNA JAMMULA, TUMULURI, Anil, NARESH KUMAR ROTTE, JAMES RAJU, K. C, SRIKANTH, V. V. S. S
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier 01.11.2014
• Subjects: Carbon; Charge; COMPOSITES; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Constituents; COPPER OXIDE; Cross-disciplinary physics: materials science; rheology; CUPRIC OXIDE; Dielectric properties of solids and liquids; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics; Dielectrics, piezoelectrics, and ferroelectrics and their properties; ELECTRICAL CONDUCTIVITY; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Fittings; Fullerenes and related materials; diamonds, graphite; Graphene; Hopping (conductivity); INSULATION (ELECTRICAL); Materials science; OXIDES; Permittivity (dielectric function); Physics; Specific materials; Charge storage; Composite materials; Synthesis; Calcium nitride; Capacitors; Graphene; Dielectric materials; Transition element compounds; Copper oxide; Permittivity
• ISSN: 0008-6223; 1873-3891
• DOI: 10.1016/j.carbon.2014.07.014

Insulator-conductor composites are touted as excellent materials for charge storage capacitor applications. Cupric oxide (CuO) decked few-layered graphene (FLG) can be one such composite. Understanding the dielectric behaviour of CuO-graphene system, which is anticipated to be intricate, is definitely an attention-grabbing one. Here, CuO decked FLG composite is synthesized using molecular level mixing. Samples with different amounts of FLG (low and high amount FLG containing samples are named as CuO-O.1G and CuO-0.2G, respectively) are prepared. At 1 kHz, dielectric permittivity ( epsilon super(1)) values of CuO-0.1G (e super(1) = 318) and Cu0-0.2G (e super(1) = 667) are ~1.1 and ~2.3 times greater, respectively than that of CuO ( epsilon super(1) = 289). Increase in epsilon super(1) is ascribed to the formation of continuous conductive pathway between CuO decked FLG sheets. AC conductivity ([sigma]) of CuO-0.1G and CuO-0.2G samples is found to increase with applied frequency and follows Jonscher's power law. Experimental data pertaining to AC conductivity could be easily fitted to quantum mechanical tunnelling model. The fitting results suggest electron hopping mechanism as the cause for enhanced AC conductivity. This work gives a great motivation to develop composite materials (with conducting and insulating constituents) whose dielectric behaviour can be controlled by mechanisms occurring at atomistic scale.