Ruthenium-based half Heusler alloys RuTiX (X = Si, Ge, Sn): An FP-LAPW-based analytical study of structural, electronic, elastic, mechanical and transport properties

• Published in: International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics Vol. 35; no. 3; p. 2150046
• Main Authors: Abraham, Jisha Annie, Dey, Aditya, Kumari, Meena
• Format: Journal Article
• Language: English
• Published: Singapore World Scientific Publishing Company 30.01.2021; World Scientific Publishing Co. Pte., Ltd
• Subjects: Conduction bands; Density of states; Elastic properties; Fermi level; Ferromagnetism; Figure of merit; Germanium; Heusler alloys; Magnetic moments; Magnetism; P-type semiconductors; Phase stability; Plane waves; Ruthenium; Silicon compounds; Stability criteria; Thermoelectricity; Tin; Transport properties; Valence band; energy dispersion curves; FP-LAPW; mechanical properties
• ISSN: 0217-9792; 1793-6578
• DOI: 10.1142/S0217979221500466

An full potential linearized augmented plane wave (FP-LAPW)-based analytical study of structural, electronic, mechanical and thermoelectric properties has been done for the Ruthenium-based half heusler RuTiX (X = Si, Ge and Sn) compounds. An efficient method to develop Half Heusler (HH) alloys is by examining their stability of structure in various phases, by plotting electronic band structures, computing elastic constants and also by studying the presence of magnetic moments. In this study, we have used DFT-based calculations to scrutinise the paramagnetic/ferromagnetic (FM) as well as metallic/semiconducting behavior of these HH compounds. The predicted phase stability using the energy versus volume curves reveals that they are stable in Type C phase. RuTiSi and RuTiGe are found to be stable in the paramagnetic phase whereas RuTiSn is stable in the FM phase with a finite value of magnetic moment. The electronic band structures and density of states (DOS) plots predict that the studied compounds belong to p -type degenerate semiconductors as the Fermi Level lies within the valence band. Due to the existence of finite DOS at the Fermi level, they show an enhanced metallic behavior. A small value indirect gap is found between valence band maximum (VBM) and conduction band minimum (CBM) in all these studied RuTiX HH alloys depicting their semiconducting nature. The elastic constants of cubic phase are computed for the first time and they obey the mechanical stability criteria. The positive value of C 1 2 − C 4 4 and value of B / G H ratio of these HH compounds exhibit their ductile nature. The thermoelectric properties of these compounds are investigated, and a comparatively higher figure of merit reveals their scope of application in thermoelectric devices.