Non-ideal effect in 4H-SiC bipolar junction transistor with double Gaussian-doped base

The non-ideal effect of 4H-SiC bipolar junction transistor （BJT） with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect i...

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Published inChinese physics B Vol. 24; no. 6; pp. 651 - 655
Main Author 元磊 张玉明 宋庆文 汤晓燕 张义门
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
4H-SiC
BJT
Computer simulation
Electrical junctions
Emittance
Gain
Junction transistors
Semiconductor devices
Silicon carbide
Voltage
双极
掺杂
电流增益
结型晶体管
非理想
高斯
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Summary:The non-ideal effect of 4H-SiC bipolar junction transistor （BJT） with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummet number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly- doped base epilayer, the 4H-BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability.
Bibliography:The non-ideal effect of 4H-SiC bipolar junction transistor （BJT） with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummet number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly- doped base epilayer, the 4H-BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability.
4H-SiC BJT, double base, early voltage, emitter current crowding
Yuan Lei Zhang Yu-Ming, Song Qing-Wen, Tang Xiao-Yan, and Zhang Yi-Men（ a） Kcy Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi ＇ an 710071, China b） School of Advanced Materials and Nanotechnology, Xidian University, Xi ＇ an 710071, China
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/6/068502