Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition

The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon （a-Si） buffer layer by met- alorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, the growth conditions of the a-Si buffer layer are optimized for growth of high-quali...

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Published inChinese physics letters Vol. 32; no. 8; pp. 165 - 168
Main Author 王俊 胡海洋 贺云瑞 邓灿 王琦 段晓峰 黄永清 任晓敏
Format Journal Article
LanguageEnglish
Published 01.08.2015
Subjects
a-Si
Buffer layers
Defects
Dislocation density
GaAs／Si
Gallium arsenide
Reduction
Silicon
Silicon films
Silicon substrates
化学气相沉积法
外延层生长
有机金属
沉积薄膜
缓冲层
缺陷
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Summary:The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon （a-Si） buffer layer by met- alorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, the growth conditions of the a-Si buffer layer are optimized for growth of high-quality GaAs//Si epilayers. The a-Si buffer layer exhibits the best effect with thickness of 1.8nm and growth temperature of 620℃. It is found that the introduction of this a-Si layer on Si substrates effectively reduces the dislocation density in GaAs//Si films. As compared with the dislocation density of 5 × 107 cm-2 in the GaAs/Si sample without the a-Si layer, a density of 3 × 105 cm-2 is achieved in the sample with the a-Si layer, and the defect reduction mechanism is discussed in detail.
Bibliography:WANG Jun, HU Hai-Yang, HE Yun-Rui, DENG Can, WANG Qi, DUAN Xiao-Feng, HUANG Yong-Qing, REN Xiao-Min（ Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications State Key Laboratory of Information Photonics and Optical Communications, Beijing 100876）
11-1959/O4
The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon （a-Si） buffer layer by met- alorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, the growth conditions of the a-Si buffer layer are optimized for growth of high-quality GaAs//Si epilayers. The a-Si buffer layer exhibits the best effect with thickness of 1.8nm and growth temperature of 620℃. It is found that the introduction of this a-Si layer on Si substrates effectively reduces the dislocation density in GaAs//Si films. As compared with the dislocation density of 5 × 107 cm-2 in the GaAs/Si sample without the a-Si layer, a density of 3 × 105 cm-2 is achieved in the sample with the a-Si layer, and the defect reduction mechanism is discussed in detail.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/8/088101