A full W-band low noise amplifier module for millimeter-wave applications
A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117...
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| Published in | Journal of semiconductors Vol. 36; no. 9; pp. 99 - 104 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/36/9/095001 |
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| Abstract | A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption. |
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| AbstractList | A full W-band low noise amplifier (LNA) module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band (below 3 dB from 89 to 95 GHz) at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption. A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption. |
| Author | 赵华 姚鸿飞 丁芃 苏永波 宁晓曦 金智 刘新宇 |
| AuthorAffiliation | Institute of M icroelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Cites_doi | 10.1002/mop.21216 10.1109/16.906438 10.1109/22.20065 10.1109/22.575603 |
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| Notes | W-band： low noise amplifier （LNA）; waveguide-to-microstrip probe transition; noise figure; LNAmodule 11-5781/TN A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Hongfei Yao (6) 2013; 34 Kerssenbrock T V (1) Ma X (18) Sholley M (10) 1999; 2 14 16 Kuzmin S E (12) 17 Yinghui Zhong (7) 2013; 34 Pozar D M (20) 1998 Yinghui Zhong (9) 2012; 33 Hongfei Yao (5) 2013; 34 Ping Zhou (13) Kangaslahti P (3) Baek T J (2) 8 Youtao Zhang (4) 2014; 35 Llorente-Romano S (15) Tikhov Y (19) Bryerton E W (11) Chang D P (21) |
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| Snippet | A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is... A full W-band low noise amplifier (LNA) module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is... |
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| SubjectTerms | Amplifiers Assembly Bandwidth Gain Low noise Modules Noise levels Semiconductors 低噪声放大器 全波段 小信号增益 应用 接口集成电路 模块 毫米波 过渡设计 |
| Title | A full W-band low noise amplifier module for millimeter-wave applications |
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