A full W-band low noise amplifier module for millimeter-wave applications

A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 9; pp. 99 - 104
Main Author 赵华 姚鸿飞 丁芃 苏永波 宁晓曦 金智 刘新宇
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Amplifiers
Assembly
Bandwidth
Gain
Low noise
Modules
Noise levels
Semiconductors
低噪声放大器
全波段
小信号增益
应用
接口集成电路
模块
毫米波
过渡设计
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ISSN1674-4926
DOI10.1088/1674-4926/36/9/095001

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Summary:A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.
Bibliography:W-band： low noise amplifier （LNA）; waveguide-to-microstrip probe transition; noise figure; LNAmodule
11-5781/TN
A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/9/095001